This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
BUL1102EFP NPN Transistor, 8 A, 450 V, 3-Pin TO-220FP
Manufacturer:
STMicroelectronics
Manufacturer Part No:
BUL1102EFP
Enrgtech Part No:
ET12012477
Warranty:
Manufacturer
£ 0.86
Checking for live stock
Transistor Type:
NPN
Maximum DC Collector Current:
8 A
Maximum Collector Emitter Voltage:
450 V
Package Type:
TO-220FP
Mounting Type:
Through Hole
Maximum Power Dissipation:
70 W
Transistor Configuration:
Single
Maximum Emitter Base Voltage:
12 V
Pin Count:
3
Number of Elements per Chip:
1
Dimensions:
10.4 x 4.6 x 16.4mm
Maximum Operating Temperature:
+150 °C
