The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
BFP842ESDH6327XTSA1 NPN RF Bipolar Transistor, 40 mA, 3.25 V, 4-Pin SOT-343
Manufacturer:
Infineon
Manufacturer Part No:
BFP842ESDH6327XTSA1
Enrgtech Part No:
ET16792392
Warranty:
Manufacturer
£ 0.21
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Transistor Type:
NPN
Maximum DC Collector Current:
40 mA
Maximum Collector Emitter Voltage:
3.25 V
Package Type:
SOT-343
Mounting Type:
Surface Mount
Maximum Power Dissipation:
120 mW
Transistor Configuration:
Single
Maximum Collector Base Voltage:
3.5 V, 4.1 V
Maximum Operating Frequency:
60 GHz
Pin Count:
4
Number of Elements per Chip:
1
Dimensions:
2 x 1.25 x 0.8mm
