Infineon BFR360FH6765XTSA1 NPN RF Bipolar Transistor, 35 mA, 15 V, 3-Pin TSFP-3-1 | BFR360FH6765XTSA1 | ET16792403

The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use. Low noise amplifiers for FM and AM radio
Minimum noise figure

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BFR360FH6765XTSA1 NPN RF Bipolar Transistor, 35 mA, 15 V, 3-Pin TSFP-3-1

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