NPN 800 mA, 40 V BISS RETs, R1 = 2.2 kOhm, R2 = 2.2 kOhm, 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.
800 mA output current capability
Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
+-10 pct resistor ratio tolerance
AEC-Q101 qualified
Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver
Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
+-10 pct resistor ratio tolerance
AEC-Q101 qualified
Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver
PBRN123ET,215 NPN Digital Transistor, 600 mA, 40 V, 3-Pin SOT-23
Manufacturer:
Nexperia
Manufacturer Part No:
PBRN123ET,215
Enrgtech Part No:
ET16800116
Warranty:
Manufacturer
£ 0.06
Checking for live stock
Transistor Type:
NPN
Maximum DC Collector Current:
600 mA
Maximum Collector Emitter Voltage:
40 V
Package Type:
SOT-23 (TO-236AB)
Mounting Type:
Surface Mount
Maximum Power Dissipation:
570 mW
Transistor Configuration:
Single
Maximum Emitter Base Voltage:
10 V
Pin Count:
3
Number of Elements per Chip:
1
Typical Resistor Ratio:
1
Base-Emitter Resistor:
2.2kΩ
