Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.
100 V, 3A PNP high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
PHPT61003PYX PNP Transistor, -3 A, -100 V, 4 + Tab-Pin LFPAK56, SOT669
Manufacturer:
Nexperia
Manufacturer Part No:
PHPT61003PYX
Enrgtech Part No:
ET16800339
Warranty:
Manufacturer
£ 0.13
Checking for live stock
Transistor Type:
PNP
Maximum DC Collector Current:
-3 A
Maximum Collector Emitter Voltage:
-100 V
Package Type:
LFPAK56, SOT669
Mounting Type:
Surface Mount
Maximum Power Dissipation:
25 W
Minimum DC Current Gain:
150
Transistor Configuration:
Single
Maximum Collector Base Voltage:
-100 V
Maximum Emitter Base Voltage:
-8 V
Maximum Operating Frequency:
125 MHz
Pin Count:
4 + Tab
