Toshiba TBC847B,LM(T NPN Transistor, 200 mA, 50 V, 3-Pin SOT-23 | TBC847B,LM(T | ET22733108

The Toshiba bipolar transistor made up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers. Storage temperature range −55 to 150 °C

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TBC847B,LM(T NPN Transistor, 200 mA, 50 V, 3-Pin SOT-23

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