MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

Transistor Type:

NPN

Maximum Continuous Collector Current:

4 A

Maximum Collector Emitter Voltage:

100 V

Maximum Emitter Base Voltage:

5 V

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Transistor Configuration:

Single

Number of Elements per Chip:

1

Minimum DC Current Gain:

200

Maximum Base Emitter Saturation Voltage:

4 V

Maximum Collector Base Voltage:

100 V

Maximum Collector Emitter Saturation Voltage:

3 V

Maximum Collector Cut-off Current:

0.02mA

Maximum Operating Temperature:

+150 °C

Dimensions:

6.73 x 6.22 x 2.38mm

Minimum Operating Temperature:

-65 °C

Width:

6.22mm

Length:

6.73mm

Height:

2.38mm