

The ON Semiconductor high voltage gate driver with one non-isolated low side gate driver and one galvanic isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. An isolated high side driver can be powered with an isolated power supply or with Bootstrap technique from the low side power supply. This galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Package is SOIC-8 (Pb-Free)
High peak current output (+1.9A/-2.3A)
Low output voltage drop for enhanced IGBT conduction
Secured output low state without VDD/VB
Floating channel for Bootstrap operation up to +800V
CMTI up to 50kV/s
Reliable operation for VS negative swing to -800V
VDD & VBS supply range up to 20V
High peak current output (+1.9A/-2.3A)
Low output voltage drop for enhanced IGBT conduction
Secured output low state without VDD/VB
Floating channel for Bootstrap operation up to +800V
CMTI up to 50kV/s
Reliable operation for VS negative swing to -800V
VDD & VBS supply range up to 20V

NCV57200DR2G Gate Driver, 1.9 A, 20V 8-Pin, SOIC-8
Manufacturer:
onsemi
Manufacturer Part No:
NCV57200DR2G
Enrgtech Part No:
ET20190023
Warranty:
Manufacturer
£ 1.32
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Output Current:
1.9 A
Supply Voltage:
20V
Pin Count:
8
Package Type:
SOIC-8
Driver Type:
General Purpose