GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Maximum Continuous Collector Current:

50 A

Maximum Collector Emitter Voltage:

600 V

Maximum Gate Emitter Voltage:

±25V

Maximum Power Dissipation:

230 W

Package Type:

TO-3P

Mounting Type:

Through Hole

Channel Type:

N

Pin Count:

3

Switching Speed:

1MHz

Transistor Configuration:

Single

Dimensions:

15.5 x 4.5 x 20mm

Maximum Operating Temperature:

+175 °C