GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

Maximum Continuous Collector Current:

40 A

Maximum Collector Emitter Voltage:

1200 V

Maximum Gate Emitter Voltage:

±25V

Maximum Power Dissipation:

230 W

Package Type:

TO-3P

Mounting Type:

Through Hole

Channel Type:

N

Pin Count:

3

Switching Speed:

2.5MHz

Transistor Configuration:

Single

Dimensions:

15.5 x 4.5 x 20mm

Energy Rating:

0.29mJ

Gate Capacitance:

1500pF

Maximum Operating Temperature:

175 °C