The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
High speed smooth switching device for hard & soft switching
175°C maximum junction temperature
No need for gate clamping components
175°C maximum junction temperature
No need for gate clamping components
IKP28N65ES5XKSA1 Single IGBT, 38 A 650 V TO-220-3
Manufacturer:
Infineon
Manufacturer Part No:
IKP28N65ES5XKSA1
Enrgtech Part No:
ET24126249
Warranty:
Manufacturer
£ 2.33
Checking for live stock
Maximum Continuous Collector Current:
38 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
20V
Maximum Power Dissipation:
130 W
Number of Transistors:
1
Configuration:
Single
Package Type:
TO-220-3
