N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXFN360N15T2

Channel Type:

N

Maximum Continuous Drain Current:

310 A

Maximum Drain Source Voltage:

150 V

Package Type:

SOT-227

Series:

GigaMOS TrenchT2 HiperFET

Mounting Type:

Screw Mount

Pin Count:

4

Maximum Drain Source Resistance:

4 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

1.07 kW

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

38.23mm

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

715 nC @ 10 V

Number of Elements per Chip:

1

Width:

25.07mm

Height:

9.6mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.2V