N-Channel MOSFET, 420 A, 100 V, 4-Pin SOT-227 IXFN420N10T

Channel Type:

N

Maximum Continuous Drain Current:

420 A

Maximum Drain Source Voltage:

100 V

Series:

GigaMOS Trench HiperFET

Package Type:

SOT-227

Mounting Type:

Screw Mount

Pin Count:

4

Maximum Drain Source Resistance:

2.3 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

1.07 kW

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

25.07mm

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

670 nC @ 10 V

Length:

38.23mm

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

9.6mm

Forward Diode Voltage:

1.2V