

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2
Manufacturer:
IXYS
Manufacturer Part No:
IXFK100N65X2
Enrgtech Part No:
ET11484317
Warranty:
Manufacturer
£ 14.56
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
100 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-264P
Series:
HiperFET, X2-Class
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
30 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Minimum Gate Threshold Voltage:
2.7V
Maximum Power Dissipation:
1.04 kW