N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

Channel Type:

N

Maximum Continuous Drain Current:

90 A

Maximum Drain Source Voltage:

600 V

Series:

HiperFET, Polar3

Package Type:

SOT-227

Mounting Type:

Screw Mount

Pin Count:

4

Maximum Drain Source Resistance:

56 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Maximum Power Dissipation:

1.5 kW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Transistor Material:

Si

Length:

38.23mm

Width:

25.07mm

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

245 nC @ 10 V

Maximum Operating Temperature:

+150 °C

Minimum Operating Temperature:

-55 °C

Height:

9.6mm