N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

Channel Type:

N

Maximum Continuous Drain Current:

53 A

Maximum Drain Source Voltage:

800 V

Package Type:

SOT-227

Series:

HiperFET, Polar

Mounting Type:

Screw Mount

Pin Count:

4

Maximum Drain Source Resistance:

140 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Maximum Power Dissipation:

1.04 kW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Typical Gate Charge @ Vgs:

250 nC @ 10 V

Number of Elements per Chip:

1

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Length:

38.23mm

Width:

25.42mm

Height:

9.6mm

Minimum Operating Temperature:

-55 °C