N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

Channel Type:

N

Maximum Continuous Drain Current:

26 A

Maximum Drain Source Voltage:

1200 V

Series:

HiperFET, Polar

Package Type:

TO-264

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

460 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

6.5V

Maximum Power Dissipation:

960 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Length:

19.96mm

Width:

5.13mm

Typical Gate Charge @ Vgs:

225 nC @ 10 V

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

26.16mm