N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXFN360N10T

Channel Type:

N

Maximum Continuous Drain Current:

360 A

Maximum Drain Source Voltage:

100 V

Series:

GigaMOS Trench HiperFET

Package Type:

SOT-227

Mounting Type:

Screw Mount

Pin Count:

4

Maximum Drain Source Resistance:

2.6 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4.5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

830 W

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

525 nC @ 10 V

Number of Elements per Chip:

1

Width:

25.07mm

Length:

38.23mm

Height:

9.6mm

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C