N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

Channel Type:

N

Maximum Continuous Drain Current:

66 A

Maximum Drain Source Voltage:

600 V

Package Type:

SOT-227

Series:

HiperFET, Polar3

Mounting Type:

Screw Mount

Pin Count:

4

Maximum Drain Source Resistance:

70 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Maximum Power Dissipation:

960 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Length:

38.23mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Width:

25.07mm

Typical Gate Charge @ Vgs:

190 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

9.6mm