N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 CSD19506KCS

Channel Type:

N

Maximum Continuous Drain Current:

273 A

Maximum Drain Source Voltage:

80 V

Series:

NexFET

Package Type:

TO-220

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

2.8 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.2V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Width:

4.7mm

Length:

10.67mm

Typical Gate Charge @ Vgs:

120 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Height:

16.51mm

Minimum Operating Temperature:

-55 °C