N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P

Channel Type:

N

Maximum Continuous Drain Current:

50 A

Maximum Drain Source Voltage:

200 V

Package Type:

TO-220

Series:

HiperFET, Polar

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

60 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5.5V

Maximum Power Dissipation:

360 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+175 °C

Length:

10.66mm

Width:

4.83mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

70 nC @ 10 V

Number of Elements per Chip:

1

Height:

9.15mm

Minimum Operating Temperature:

-55 °C