N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

Channel Type:

N

Maximum Continuous Drain Current:

33 A

Maximum Drain Source Voltage:

100 V

Package Type:

I2PAK (TO-262)

Series:

HEXFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

44 mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation:

130 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+175 °C

Width:

4.83mm

Length:

10.67mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

71 nC @ 10 V

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

9.65mm

Forward Diode Voltage:

1.2V