N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK TK12P60W,RVQ(S

Channel Type:

N

Maximum Continuous Drain Current:

11.5 A

Maximum Drain Source Voltage:

600 V

Package Type:

DPAK (TO-252)

Series:

TK

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

340 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.7V

Maximum Power Dissipation:

100 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Width:

6.1mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Length:

6.6mm

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

25 nC @ 10 V

Height:

2.3mm