


N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel MOSFET, 353 A, 24 V, 3-Pin TO-220AB IRF1324PBF
Manufacturer:
Infineon
Manufacturer Part No:
IRF1324PBF
Enrgtech Part No:
ET14113806
Warranty:
Manufacturer
£ 2.09
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Channel Type:
N
Maximum Continuous Drain Current:
353 A
Maximum Drain Source Voltage:
24 V
Package Type:
TO-220AB
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
2 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
300 W