N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

Channel Type:

N

Maximum Continuous Drain Current:

30.8 A

Maximum Drain Source Voltage:

600 V

Series:

DTMOSIV

Package Type:

TO-220

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

88 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

230 W

Maximum Gate Source Voltage:

-30 V, +30 V

Typical Gate Charge @ Vgs:

65 nC @ 10 V

Length:

10.16mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Width:

4.45mm

Height:

15.1mm

Forward Diode Voltage:

1.7V