N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1,S1X(S

Channel Type:

N

Maximum Continuous Drain Current:

263 A

Maximum Drain Source Voltage:

60 V

Series:

U-MOSVIII-H

Package Type:

TO-220

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

2.3 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

255 W

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Width:

4.45mm

Typical Gate Charge @ Vgs:

140 nC @ 10 V

Length:

10.16mm

Transistor Material:

Si

Forward Diode Voltage:

1.2V

Height:

15.1mm