SiC MOSFET, 1200 V CAB450M12XM3

Maximum Drain Source Voltage:

1200 V

Maximum Drain Source Resistance:

4.6 mΩ

Maximum Gate Threshold Voltage:

3.6V

Minimum Gate Threshold Voltage:

1.8V

Maximum Power Dissipation:

50 mW

Maximum Gate Source Voltage:

-4 V, 19 V

Number of Elements per Chip:

1

Width:

53mm

Length:

80mm

Transistor Material:

SiC

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

1330 nC @ 4/15V

Height:

15.75mm

Minimum Operating Temperature:

-40 °C