The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.
Storage temperature range −55 to 150 °C
Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
Manufacturer:
Toshiba
Manufacturer Part No:
SSM6N7002KFU,LF(T
Enrgtech Part No:
ET22733106
Warranty:
Manufacturer
£ 0.02
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Channel Type:
N
Maximum Continuous Drain Current:
300 mA
Maximum Drain Source Voltage:
60 V
Package Type:
US6
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
1.2e+006 Ω
Maximum Gate Threshold Voltage:
2.1V
Transistor Material:
Silicon
Number of Elements per Chip:
2
