

The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
Excellent switching performance
Easy to drive
100 percent avalanche tested

Silicon N-Channel MOSFET, 54 A, 650 V, 3-Pin TO247-4 STW65N045M9-4
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STW65N045M9-4
Enrgtech Part No:
ET25461154
Warranty:
Manufacturer
£ 16.50
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Channel Type:
N
Maximum Continuous Drain Current:
54 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO247-4
Series:
STW65N
Mounting Type:
Through Hole
Pin Count:
3
Channel Mode:
Enhancement
Number of Elements per Chip:
1
Transistor Material:
Silicon