

The Hamamatsu Photonics InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Its provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm.
Low noise, low dark current
Low terminal capacitance
Large photosensitive area
Low terminal capacitance
Large photosensitive area

Hamamatsu Photonics G12180-003A Hamamatsu, G12180-003A IR InGaAs Photodiode, Through Hole TO-18
Manufacturer:
Hamamatsu PhotonicsManufacturer Part No:
G12180-003A
Enrgtech Part No:
ET26030638
Warranty:
Manufacturer
£ 52.17
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Spectrums Detected:
Infrared
Package Type:
TO-18
Mounting Type:
Through Hole
Number of Pins:
3
Diode Material:
InGaAs