Hamamatsu, G12180-010A IR InGaAs Photodiode, Through Hole TO-18 | G12180-010A | ET26030640

The Hamamatsu Photonics InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Its provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm. Low noise, low dark current
Low terminal capacitance
Large photosensitive area

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Hamamatsu Photonics G12180-010A Hamamatsu, G12180-010A IR InGaAs Photodiode, Through Hole TO-18

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