The Infineon 16 mΩ dual channel smart high-side power switch, embedded in a PG-DSO14-40-EP, exposed pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. Two channel device
Very low stand by current
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state