


TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage

120V 20A, Schottky Diode, 3-Pin TO-220AB V20120S-E3/4W
Manufacturer:
Vishay
Manufacturer Part No:
V20120S-E3/4W
Enrgtech Part No:
ET11436010
Warranty:
Manufacturer
£ 0.90
Checking for live stock
Mounting Type:
Through Hole
Package Type:
TO-220AB
Maximum Continuous Forward Current:
20A
Peak Reverse Repetitive Voltage:
120V
Diode Configuration:
Single
Rectifier Type:
Schottky Rectifier
Diode Type:
Schottky
Pin Count:
3
Maximum Forward Voltage Drop:
1.12V
Number of Elements per Chip:
1
Diode Technology:
Schottky Barrier
Peak Non-Repetitive Forward Surge Current:
200A