Deliver to United Kingdom

v20120s-e34w Vishay 120V 20A, Schottky Diode, 3-Pin TO-220AB V20120S-E3/4W
v20120s-e34w Vishay 120V 20A, Schottky Diode, 3-Pin TO-220AB V20120S-E3/4W
v20120s-e34w Vishay 120V 20A, Schottky Diode, 3-Pin TO-220AB V20120S-E3/4W
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. Features Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Vishay

120V 20A, Schottky Diode, 3-Pin TO-220AB V20120S-E3/4W

Manufacturer:
Vishay
Manufacturer Part No:
V20120S-E3/4W
Enrgtech Part No:
ET11436010
Warranty:
Manufacturer
£ 0.90

Checking for live stock

Mounting Type:

Through Hole

Package Type:

TO-220AB

Maximum Continuous Forward Current:

20A

Peak Reverse Repetitive Voltage:

120V

Diode Configuration:

Single

Rectifier Type:

Schottky Rectifier

Diode Type:

Schottky

Pin Count:

3

Maximum Forward Voltage Drop:

1.12V

Number of Elements per Chip:

1

Diode Technology:

Schottky Barrier

Peak Non-Repetitive Forward Surge Current:

200A

Related products