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v12p10-m386a Vishay 100V 12A, Schottky Diode, 3-Pin TO-277A V12P10-M3/86A
v12p10-m386a Vishay 100V 12A, Schottky Diode, 3-Pin TO-277A V12P10-M3/86A
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. Features Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Vishay

100V 12A, Schottky Diode, 3-Pin TO-277A V12P10-M3/86A

Manufacturer:
Vishay
Manufacturer Part No:
V12P10-M3/86A
Enrgtech Part No:
ET11633738
Warranty:
Manufacturer
£ 0.88

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Mounting Type:

Surface Mount

Package Type:

TO-277A

Maximum Continuous Forward Current:

12A

Peak Reverse Repetitive Voltage:

100V

Diode Configuration:

Single

Rectifier Type:

Schottky Rectifier

Diode Type:

Schottky

Pin Count:

3

Number of Elements per Chip:

1

Diode Technology:

Schottky Barrier

Peak Non-Repetitive Forward Surge Current:

200A

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