The Infineon schottky diode has silicon carbide material. It does not have reverse recovery current and forward recovery. It has temperature independent switching behaviour. Low forward voltage even at high operating temperature. It has tight forward voltage distribution and excellent thermal performance. It has extended surge current capability. System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced hea tsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability