The STMicroelectronics STPSC10065 is the 10 A, 650 V SiC diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. No or negligible reverse recovery
Switching behaviour independent of temperature
Dedicated to PFC applications
High forward surge capability