The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 20 A in a TO-247-3 package presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is combined with a merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance