The Renesas Electronics HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor. Rise Time Controlled to Device-Bay Specifications
No Additional Components Required
Internal Charge Pump Drives N-Channel MOSFETs
Drives any Combination of One, Two or Three Outputs
Internally-Controlled Turn-On Ramp
Prevents False Turn on During Hot Insertion
Operates using 12V or 5V Bias