The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors
NPN transistor (fT) 8GHz
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
HFA3096BZ Pent NPN/PNP Transistor, 65 mA, 8 V, 16-Pin SOIC
Manufacturer:
Renesas Electronics
Manufacturer Part No:
HFA3096BZ
Enrgtech Part No:
ET11815938
Warranty:
Manufacturer
£ 4.98
Checking for live stock
Transistor Type:
NPN/PNP
Maximum DC Collector Current:
65 mA
Maximum Collector Emitter Voltage:
8 V
Package Type:
SOIC
Mounting Type:
Surface Mount
Pin Count:
16
Number of Elements per Chip:
5
