Infineon BFP740FESDH6327XTSA1 NPN RF Bipolar Transistor, 45 mA, 13 V SOT-343 | BFP740FESDH6327XTSA1 | ET16792389

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB. Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA
High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA
OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA

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BFP740FESDH6327XTSA1 NPN RF Bipolar Transistor, 45 mA, 13 V SOT-343

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