N-Channel Power MOSFET 150V to 600V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon evaluation board shows how to design a dual-phase LLC system solution of a telecom rectifier with the target to meet 80+ titanium standard efficiency requirements. Analog controlOptimized magnetic design

The Infineon evaluation board for design engineers who want to investigate parallel operation of Infineon CoolGaN™ to reach higher power levels in their designs. Adjustable dead time

The Infineon Evaluation Board specifically designed for various evaluation tasks. Potential applications include Body Control Modules, Power Distribution Boxes, HVAC flap control and LED lighting systems. With daughter boardSuitable for small bulb and small ECU supply

The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. Industry standard through-hole power packageHigh current ratingProduct qualification according to JEDEC standardSilicon optimized for applications switching below 100 kHzSofter body diode compared to previous silicon generationWide portfolio available

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

The Infineon IRFHS series is the -30V dual p channel strong IRFET power mosfet in a PQFN 2x2 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters. Optimized for broadest availability from distribution partnersProduct qualification according to JEDEC standardIndustry standard surface mount power packageLow RDS (on) in a small package

Fast Switching Emitter Controlled Diodes, Infineon The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz. Rapid 1 diode switches between 18kHz and 40kHz1.35V temperature-stable forward voltageIdeal for Power Factor Correction (PFC) topologiesThe Rapid 2 diode switches between 40 kHz and 100 kHzLow reverse recovery charge: forward voltage ratio for BiC performanceLow reverse recovery timeLow turn-on losses on the boost switchUltra-fast Diode 600 V/1200 V Emitter Controlled technologyQualified according to JEDEC StandardGood EMI behaviourLow conduction lossesEasy paralleling

The Infineon high and low side driver is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Low VCC operation allows use in battery powered applications. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Floating channel designed for bootstrap operationFully operational to +600 VTolerant to negative transient voltage, dV/dt immuneLow VCC operationUnder voltage lockout for both channels33 V and 5 V input logic compatibleMatched propagation delay for both channelsLogic and power ground +/- 5 V offsetLower di/dt gate driver for better noise immunityOutput source/sink current capability 40 A (Typ)

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5. P-channel - Logic Level - Enhancement modeNo charge pump required for high side drive.Simple interface drive circuitWorld's lowest RDSon at 40VHighest current capabilityLowest switching and conduction power losses for highest thermal efficiency

The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 475A. It is in Stoll package features very low RDS(on) of 0.60mOhm. It has the advantages of Infineon’s well known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, battery protection and battery formation. Optimized for low voltage motor drives applicationOptimized for battery power applicationsVery low on-resistance RDS(on)100% avalanche testedSuperior thermal performanceN-channel