High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage.
Features:
Single 3.3V ± 10% Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128 Byte
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time – 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation:
15 mA Active Current
20 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 105 Cycles
Data Retention: 10 Years
Byte-Wide Pinout
Industrial Temperature Range
Green (Pb/Halide-free) Packaging Option Only
Single 3.3V ± 10% Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128 Byte
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time – 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation:
15 mA Active Current
20 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 105 Cycles
Data Retention: 10 Years
Byte-Wide Pinout
Industrial Temperature Range
Green (Pb/Halide-free) Packaging Option Only
AT28LV010-20JU, 1Mbit Parallel EEPROM Memory, 200ns 32-Pin PLCC Parallel
Manufacturer:
Microchip
Manufacturer Part No:
AT28LV010-20JU
Enrgtech Part No:
ET18605408
Warranty:
Manufacturer
£ 40.38
Checking for live stock
Memory Size:
1Mbit
Interface Type:
Parallel
Package Type:
PLCC
Mounting Type:
Surface Mount
Pin Count:
32
Organisation:
128K x 8 bit
Minimum Operating Supply Voltage:
3.3 V
Maximum Operating Supply Voltage:
3.6 V
Programming Voltage:
3 → 3.6V
Number of Bits per Word:
8bit
Dimensions:
11.5 x 14.04 x 3.17mm
Minimum Operating Temperature:
-40 °C
