FGAF40N60SMD IGBT, 80 A 600 V, 3-Pin TO-3PF, Through Hole

Maximum Continuous Collector Current:

80 A

Maximum Collector Emitter Voltage:

600 V

Maximum Gate Emitter Voltage:

±20V

Maximum Power Dissipation:

115 W

Package Type:

TO-3PF

Mounting Type:

Through Hole

Channel Type:

N

Pin Count:

3

Switching Speed:

1MHz

Transistor Configuration:

Single

Dimensions:

15.7 x 3.2 x 26.7mm

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

-55 °C