The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA
FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V
Manufacturer:
Infineon
Manufacturer Part No:
FP50R12KE3BOSA1
Enrgtech Part No:
ET24129383
Warranty:
Manufacturer
£ 80.94
Checking for live stock
Maximum Continuous Collector Current:
75 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
280 W
Number of Transistors:
7
