Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
Manufacturer:
Infineon
Manufacturer Part No:
IGB10N60TATMA1
Enrgtech Part No:
ET16792951
Warranty:
Manufacturer
£ 0.98
Checking for live stock
Maximum Continuous Collector Current:
10 A
Maximum Collector Emitter Voltage:
600 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
110 W
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Channel Type:
N
Pin Count:
3
Switching Speed:
1MHz
Transistor Configuration:
Single
Dimensions:
10.31 x 9.45 x 4.57mm
Maximum Operating Temperature:
+175 °C
