The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V
Manufacturer:
Infineon
Manufacturer Part No:
FP25R12W2T4B11BOMA1
Enrgtech Part No:
ET24129374
Warranty:
Manufacturer
£ 44.94
Checking for live stock
Maximum Continuous Collector Current:
39 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
+/-20V
Number of Transistors:
7
Maximum Power Dissipation:
175 W
