Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole
Manufacturer:
Infineon
Manufacturer Part No:
IKP15N65F5XKSA1
Enrgtech Part No:
ET16792991
Warranty:
Manufacturer
£ 2.07
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Maximum Continuous Collector Current:
30 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
105 W
Package Type:
TO-220
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
10.36 x 4.57 x 15.95mm
Maximum Operating Temperature:
+175 °C
Energy Rating:
0.17mJ
