IGBT
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STGW100H65FB2-4
Enrgtech Part No:
ET20190192
Warranty:
Manufacturer
£ 3.75
Checking for live stock
Maximum Continuous Collector Current:
145 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Number of Transistors:
1
Maximum Power Dissipation:
441 W
Package Type:
TO247-4
Channel Type:
N
Pin Count:
4
Transistor Configuration:
Single
