IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Maximum Continuous Collector Current:

80 A

Maximum Collector Emitter Voltage:

650 V

Maximum Gate Emitter Voltage:

±20V

Maximum Power Dissipation:

274 W

Number of Transistors:

1

Package Type:

TO-247

Mounting Type:

Through Hole

Channel Type:

N

Pin Count:

3

Switching Speed:

30kHz

Transistor Configuration:

Single

Dimensions:

16.13 x 5.21 x 21.1mm

Gate Capacitance:

3100pF

Energy Rating:

1.78mJ

Minimum Operating Temperature:

-40 °C

Maximum Operating Temperature:

+175 °C