N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3
Manufacturer:
IXYS
Manufacturer Part No:
IXFR24N100Q3
Enrgtech Part No:
ET10546978
Warranty:
Manufacturer
£ 23.88
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
18 A
Maximum Drain Source Voltage:
1000 V
Series:
HiperFET, Q3-Class
Package Type:
ISOPLUS247
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
490 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
6.5V
Maximum Power Dissipation:
500 W
Transistor Configuration:
Single
